GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m

Tapered oscillators fabricated from GaInAsSb-AlGaAsSb quantum-well structure are reported for the first time. The quantum-well laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 330 A/cm/sup 2/ at room temperature. One tapered laser emitting at 2.02 mu m has exhibited continuous wave (CW) output power up to 750 mW, with power in the near-diffraction-limited central lobe as high as 200 mW.<
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