Fabrication and characterization of an In/sub 0.53/Ga/sub 0.47/As/InP photon transport transistor

A photon transport transistor fabricated using the lattice-matched In/sub 0.53/Ga/sub 0.47/As/InP material system is described. The device consists of a light emitting diode integrated on top of a photodiode, with very tight optical coupling between the two devices. The device behaves like a bipolar junction transistor except that photons rather than minority carriers are transported through the base region. The device fabricated has a voltage gain of 258 and a current gain of 0.07, yielding an electrical power gain of 18.1. The center wavelength emitted by the light emitting diode is at 1.55 mu m.<
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