Increase of parasitic resistance of p-MOSFETs due to nitrogen atoms incorporation into silicon substrate by N/sub 2/O-oxynitride gate dielectrics process

In this paper, we study the characteristics of MOSFETs with N/sub 2/O-oxynitride gate dielectrics, shallow junctions and TiSi/sub 2/ source/drain diffusions in order to investigate the overall impact of N/sub 2/O-oxynitride gate dielectrics on high performance CMOSFETs. It is demonstrated that, in addition to the mobility degradation, an increase of parasitic resistance in gate-overlapped source/drain region by the nitrogen donors contributes to the reduction of current drivability, especially in p-MOSFETs.