Linearizing integrated Hall devices

This paper shows how modern integrated silicon Hall devices can be linearized without any additional error correction. Several non-linearity effects are studied and by adequate means either eliminated or mutually compensated. Experimental results demonstrate that the remaining non-linearity in a magnetic field of up to 2 T can be decreased to less than 1%. Together with low noise characteristics and extraordinary long-term stability, these devices are ideal sensors for low cost, high accuracy applications in low and medium magnetic fields.