Novel SiGeC channel heterojunction PMOSFET

The fabrication and characterization of heterojunction PMOSFETs with strain-engineered Si/sub 1-x-y/Ge/sub x/C/sub y/ channel is reported for the first time. The study has demonstrated the performance enhancement of partially strain compensated Si/sub 0.793/Ge/sub 0.2/C/sub 0.007/ MOSFET over fully-strained metastable Si/sub 0.8/Ge/sub 0.2/ channel. Complete strain compensation by incorporating higher amounts of C (Ge-to-C ratio=10:1), however, results in the degradation of device characteristics as compared to the Si/sub 1-x/Ge/sub x/ sample.