Fundamental material analysis and SIMOX improvement as a function of independent implant parameter control

Until recently, implanted material fabrication incorporated inherently coupled parameters of the selected species implant. With the advent of decoupled implant parameters, first and second order material quality influences can be determined and applied towards material improvements. This paper reports on the fundamental material analysis and SIMOX quality as a function of independently controlled wafer temperature, energy, and beam current. Their influence on the microstructure and electrical behavior of single implant SIMOX material has been investigated for a resulting improvement in the silicon/buried oxide interface and an understanding of dislocation reduction and buried oxide improvement mechanisms.