0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

High-performance 0.1-/spl mu/m-gate InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD have been developed, and it has been found that the InP-recess-etch stopper does not degrade device performance and does improve the uniformity of the threshold voltage and the designability of the device structure. InAlAs/InGaAs HEMTs on an InP substrate are thus applicable to ultra-high-speed digital ICs for future communication systems.