A selective epitaxial SiGe/Si planar photodetector for Si-based OEICs

This paper reports, for the first time, a P-i-N SiGe/Si superlattice photodetector with a planar structure for Si-based OEICs (Opto-Electronic Integrated Circuits). To make the planar structure, a novel SiGe/Si selective epitaxial growth technology by a cold wall UHV (Ultra-High-Vacuum)/CVD is newly developed. The P-i-N planar SiGe/Si photodetector exhibits a high external quantum efficiency (/spl eta//sub ext/) of 25%-29% with a low dark current of 0.5 pA//spl mu/m/sup 2/ and responds up to 10 Gbit/s at /spl lambda/=0.98 /spl mu/m.