State-of-the-art performance millimetre wave gallium arsenide Gunn diodes using ballistically hot electron injectors

Ballistically hot electron injectors have been designed using a graded gap GaAs/AlGaAs structure and incorporated into the cathode side of a GaAs Gunn diode drift region. Epitaxial material has been grown using MBE (molecular-beam epitaxy) techniques and diodes have been fabricated. RF assessment at 94 GHz has resulted in efficiencies over 2.3% and greater than 50 mW output power, combined with low sideband noise performance and much improved temperature stability.<
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