High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFETs

A DC and small-signal self-consistent thermal physical model for power GaAs MESFETs is presented. The high-resolution coupled electrothermal two-dimensional simulation is carried out on the active region only, while the large-scale outward heat flow through the boundary of the simulated region is accounted for by means of distributed thermal resistances. To provide such boundary conditions, but also as an independent design tool, a novel analytical thermal resistance model for multigate power MESFETs is introduced. Results from both models are discussed and compared with measurements.<
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