A model charge transport in thermal SiO/sub 2/ implanted with Si

A model of charge transport in thermal SiO/sub 2/ with Si-implant-induced traps is proposed. In this model, traps are permitted to communicate with both the conduction band and the valence band of the Si substrate and poly-Si gate by means of direct tunneling. Electron injection in the SiO/sub 2/ conduction band, electron trapping by neutral and positively charged sites, and field depopulation of negatively charged traps are allowed. Net neutral traps can charge positively by losing an electron or negatively by acquiring one by any of the mechanisms discussed. Allowed transitions occur in the energetically favorable regions of SiO/sub 2/ as defined by the self-consistent potential energy distribution. The model adequately describes current conduction in 20-35-nm-thick SiO/sub 2/ implanted with 0.4 to 2*10/sup 16/ Si ions/cm/sup 2/ at 10 to 25 keV over several decades of current.<
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