Partial lifetime control in IGBT by helium irradiation through mask patterns

Partial lifetime control for IGBTs (insulated-gate bipolar transistors) performed by irradiated helium ions through a stainless steel mask is studied. This control technique localizes the presence of carrier recombination centers in the lateral direction as well as in depth profile. Using this technique, one can obtain better trade-off curves between on-state voltage and turn-off loss compared with maskless irradiation. Turn-off loss is reduced to 41% of that in the case of maskless irradiation at the same on-state voltage.<
>