Analysis of silicon carbide power device performance

The authors attempt to define the drift region properties of SiC based rectifiers and MOSFETs to achieve breakdown voltages ranging from 50 to 5000 V. Using these values, the output characteristics of these devices have been calculated. It has been found that 5000-V SiC Schottky rectifiers and power MOSFETs would operate with a forward drop of less than 2 V due to the very low drift region resistance. This value is superior to that for silicon P-i-N rectifiers and gate-turn-off thyristors.<
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