Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In/sub 0.52/Al/sub 0.48/As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p/sup +/n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n/sup +/p InP cells. Cell results have been explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrates that In/sub 0.52/Al/sub 0.48/As is a promising candidate as a window layer material for p/sup +/n InP solar cells.<
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