Effects of implant angle on SIMOX structure and electrical properties of buried oxide

The approach presented by the authors revealed the effect of the implant angle on the major characteristics of SIMOX material such as thin film layer thicknesses and structure of buried oxide, pinhole density and pinhole patterns and background leakage current of the buried oxide. The obtained results show the importance of the investigated phenomena in the development of high integrity buried oxide SIMOX material and encourage further studies for the development of optimized standard and thin buried oxide SIMOX. The supporting data are presented in detail.