Inverted, substrate-removed MSM and Schottky diode optical detectors

The InGaAs metal-semiconductor-metal (MSM) photodetector is a high-performance component for lightwave communication systems. Low capacitance, dictated by finger spacing, and high carrier drift velocity result in GHz operating bandwidths. Efficient optical absorption to 1.7 /spl mu/m results in high responsivity at the wavelengths preferred for optical fiber communications, 1.3 and 1.5 /spl mu/m. Simple processing steps make the MSM practical for monolithic integration with low-noise, high electron mobility transistor (HEMT) receiver amplifiers and other opto-electronic circuit applications.