Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

Ultra-high performance n-MOSFETs were fabricated with a tunneling gate oxide 1.5 nm thick. It was found that these devices operate well when the gate length is around 0.1 /spl mu/m, because gate leakage current falls in proportion to the gate length and the drain current increases in inverse proportion. A very high drivability of 1.1 mAspl mu/m at 15 V was obtained, even in devices with a 0.14 pm gate length. A record high transconductance, 1,010 mS/mm at room temperature was also obtained in 0.09 /spl mu/m MOSFETs. Confirmation was obtained that hot-carrier reliability improves as the gate oxide thickness is reduced, even in the 1.5 nm case. High current drive at the low supply voltage of 0.5 V was also demonstrated. We made clear that very high performance is obtained in Si MOSFETs, if we can use a high capacitance gate insulator. In future devices, the tunnel gate oxide may be a good candidate for such a gate film, depending upon their applications.<
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