InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy

The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<
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