A novel method for extracting the two-dimensional doping profile of a sub-half micron MOSFET

A novel method for extracting the two-dimensional doping profile of a sub-half micron gate length MOSFET from capacitance measurements is presented. The method is able to resolve the lateral doping profile of a MOSFET, even for very shallow junctions with 0.1 micron lateral extent. It does not require any "heroic" sample preparation and uses measurements easily performed during process characterization, such as gate overlap and source/drain diode capacitances.<
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