Electrical characterization of 2-D doping profiles

The extension of traditional electrical doping profiling methods, such as the capacitance-voltage (C-V) method, to two-dimensional doping profiling is discussed. Suitable test structures are proposed. The measurement data are interpreted with inverse modeling, which minimizes the difference between measured electrical data and measurement data simulated using a parameterized model of the doping profile. Experimental results are provided for the 2-D doping profile in the junction charge-coupled device (CCD). The application of the inverse modeling technique to device parameter extraction in a more general sense is briefly discussed.<
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