Abstract:
Unlike normal heterojunction bipolar transistors (HBT's), transferred substrate Schottky-collector HBT's (SCHBT's) exhibit substantial increases in fmax as the emitter an...Show MoreMetadata
Abstract:
Unlike normal heterojunction bipolar transistors (HBT's), transferred substrate Schottky-collector HBT's (SCHBT's) exhibit substantial increases in fmax as the emitter and collector stripes are scaled to deep submicron dimensions. First generation InAlAs/InGaAs SCHBT's with aligned 1-μm emitter and collector stripes have been fabricated.
Published in: IEEE Electron Device Letters ( Volume: 16, Issue: 8, August 1995)
DOI: 10.1109/55.400737
