Abstract:
We derived a simple formula for the subthreshold swing S in double-gate (DG) SOI MOSFET's. Our formula, which depends only on a scaling device parameter, matches the devi...Show MoreMetadata
Abstract:
We derived a simple formula for the subthreshold swing S in double-gate (DG) SOI MOSFET's. Our formula, which depends only on a scaling device parameter, matches the device simulation results. From these results, our equations are simple and give a scaling rule for DG-SOI MOSFET's.<>
Published in: IEEE Electron Device Letters ( Volume: 15, Issue: 11, November 1994)
DOI: 10.1109/55.334669