Abstract:
The validity of extracted microwave device models is critically dependent on the completeness, accuracy, and appropriateness of the starting device characterization data....Show MoreMetadata
Abstract:
The validity of extracted microwave device models is critically dependent on the completeness, accuracy, and appropriateness of the starting device characterization data. In this letter we will present a novel technique for determining the S-parameters of a device under isothermal (i.e., no heating) operation. Additionally, this technique can be applied to determining the CW S-parameters under more extreme (e.g., forward bias/breakdown) operation. By pulse-biasing the device from the "OFF" to the "ON" state, while performing standard S-parameter measurements, resultant data is found to be characteristic of the weighted (by duty factor) scalar sum of the devices "ON"-state and "OFF"-state S-parameter(s). We will show how these measurements can then be used to interpret the devices isothermal CW S-parameters.
Published in: IEEE Electron Device Letters ( Volume: 17, Issue: 11, November 1996)
DOI: 10.1109/55.541773