Abstract:
A new merged BiCMOS structure is presented. It incorporates a Schottky diode between the base and the collector of the n-p-n bipolar transistor. The structure offers the ...Show MoreMetadata
Abstract:
A new merged BiCMOS structure is presented. It incorporates a Schottky diode between the base and the collector of the n-p-n bipolar transistor. The structure offers the same reduced area advantage of merged over conventional BiCMOS, and is shown to have granted latchup immunity to BiCMOS circuits. The device simulations using HSPICE verify the latchup immunity.<>
Published in: IEEE Journal of Solid-State Circuits ( Volume: 29, Issue: 3, March 1994)
DOI: 10.1109/4.278361