Remarkable improvement in the temperature characteristics of GaAs lasers using an InGaAlP cladding layer

A GaAs laser diode employing InGaAlP as the cladding has been investigated. Continuous wave (CW) operation was obtained at temperatures as high as 212 degrees C. A large characteristic temperature T/sub 0/ of 190 K was maintained up to 150 degrees C. These results were attributed to a reduction of electron overflow by a large band-gap difference between the GaAs active and InGaAlP cladding layers. Laser characteristics did not indicate any significant problem due to a heterointerface of GaAs-InGaAlP with high-Al composition.<
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