Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers

Abstract:

Graded-index separate-confinement heterostructure single-quantum-well lasers incorporating a strained In/sub x/Ga/sub 1-x/As active layer, with x>

First Page of the Article

Graded-index separate-confinement heterostructure single-quantum-well lasers incorporating a strained In/sub x/Ga/sub 1-x/As active layer, with x>

Published in: IEEE Journal of Quantum Electronics ( Volume: 27, Issue: 3, March 1991)

Page(s): 681 - 686

Date of Publication: 06 August 2002

DOI: 10.1109/3.81377

First Page of the Article

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