Near-infrared photoluminescence of high-resistivity epitaxial GaAs and InP and of epitaxial GaAs on Si

Photoluminescence of epitaxial high-resistivity GaAs and InP at liquid-helium temperatures has been studied in both the near-band-edge region and at wavelengths to ≥1.4 μm. GaAs grown at low (300°C) substrate temperature for the purpose of reducing backgating in FET integrated circuits contains Ga vacancies, as evidenced by V
_GA
-Si
_GA
pair of luminescence at 1.17 eV in Si-containing material structures. This is the first observation of Ga vacancy-related luminescence in low-temperature-grown FET buffer layer structures. These peaks are also observed in epitaxial GaAs on Si. Fe-doped InP grown by organometallic vapor-phase epitaxy for lasers exhibits greatly the reduced near-band-edge photoluminescence efficiency, and emits Fe-related peaks at 1.07, 1.10, and 1.135 eV.