Total dose and proton testing of a commercial HgCdTe array

The radiation tolerance of a commercially available 256/spl times/4 HgCdTe array has been measured. The main effects were ionization-induced and produced changes in diode slope resistance and CMOS multiplexer characteristics particularly the onset of parasitic leakage currents after /spl sim/15 krad(Si). However these effects annealed with storage above 20/spl deg/C.<
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