Radiation response of silicon on diamond (SOD) devices

Field effect transistors have been fabricated on two types of silicon-on-diamond (SOD) structures. The radiation response of the transistors has been studied. The results are compared with the radiation response of simultaneously fabricated SIMOX (separation by implantation of oxygen) devices. The extreme radiation hardness of CVD (chemical vapor deposited) diamond films is established by using an MIS capacitor structure and the ZMRSOD (zone melting recrystallization SOD) quick turn-around back channel MISFET structure. The feasibility of fabricating BESOD (bond and etchback SOD) FETs has been demonstrated, but the radiation hardness of the buried diamond in the BESOD structure could not be proven due to the excessive electrical conductivity of the buried diamond film.<
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