Radiation response of advanced commercial SRAMs

Total-dose tests have been performed on an advanced commercial 4-Mb static RAM (SRAM) that uses thin film p-channel transistors in a six-transistor (6-T) cell design in 0.35-/spl mu/m technology. These results are compared with other results obtained on similar test structures and also with other results on commercial SRAMs using the more typical four-transistor, two-resistor (4-T) design.