Radiation response of p-i-p diodes on diamond substrates of various type: electrical properties of semiconductor-insulator homojunctions

Double-junction p-i-p diodes are fabricated on natural and synthetic diamond crystals and polycrystalline CVD diamond films and subjected to /spl gamma/, e/sup -/ and neutron exposure. Parameters of the radiation induced defects (concentration and energy distribution of donor-like traps) are evaluated from the experimental I-V curves using a technique which is based on a model of thermionic injection of holes into the insulating diamond over p-i potential barrier. The evaluated parameters of the traps are used for 2-D numerical simulation of radiation effects on diamond based p-i(SiO/sub 2/)-p solid state triode.