Experimental study of a field-effect transistor using granular thin films

An experimental study of the electrostatic field effect in granular thin films is described. This effect is thought to be grounded on the intergrain junction property which is dual to the Josephson effect. In order to assess the feasibility of a field effect transistor using this phenomena, the authors attempted to enhance the amplitude of the conductance modulation induced by the electric field. The dependence of the field effect on the channel sheet resistance and on the channel dimension is examined. The effect of trapped charge on the grains is also investigated. The prospect of the granular thin-film FETs is discussed.