Abstract:
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important para...Show MoreMetadata
First Page of the Article
Abstract:
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should be considered with magnetocrystalline anisotropy.<>
Published in: IEEE Transactions on Magnetics ( Volume: 30, Issue: 6, November 1994)
DOI: 10.1109/20.334238
First Page of the Article