Optimized preparation conditions of RF co-sputtered TbFeCo magneto-optical storage films

Amorphous TeFeCo films have been prepared by RF co-sputtering from two composite Tb/sub 26/Fe/sub 74/ and Tb/sub 26/Co/sub 74/ (area %) targets. Chemical, structural, magnetic and magnetooptical properties of these films have been investigated systematically as functions of argon pressure and applied bias voltage during sputtering. For this particular preparation system, optimum sputtering parameters with respect to a high carrier-to-noise ratio have been found to be a 20-40 V bias at 8*10/sup -3/ mbar argon pressure. Dynamic write-read tests on 5-1/4-in polycarbonate disks give a carrier-to-noise ratio of 55 dB at 6-MHz carrier frequency and 30-kHz bandwidth, at a bit size of 1.4 mu m.<
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