Interference enhanced magnetic Kerr rotation in compositionally modulated TbFe/SiO films

Magnetic Kerr rotation in compositionally modulated TbFe/SiO films is reported. The spectrum of the Kerr rotation angle is tailored with an appropriate choice of the ratio of the thickness of the TbFe layer to that of the SiO layer, without any change of composition. As the thickness of both the TbFe layers and the SiO layers are small compared to the wavelength of light, the dielectric constant averaged over a compositionally modulated TbFe/SiO film is regarded as an effective dielectric constant of the film. The Kerr rotation angle is enhanced to 25 degrees .<
>