Operation of major line bubble propagation path for Bloch line memory

A novel type of current-access bubble propagation path for the major line of a vertical Bloch line memory has been designed and processed on an as-grown 5- mu m bubble garnet film that is standard except for its thickness of 2.1 mu m. The bubble propagation path consists of a meandering conductor and high-coercive-force hard magnetic patterns in CoPt which provide an offset force for the bubble motion. A reasonable bias field margin (14% of midbias field value) for the bubble propagation was measured in a test chip. The bias field compatibility between bubbles on the major line bubble propagation path and confined stripe domains for the minor loop have been confirmed experimentally.<
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