Spin tunneling random access memory (STram)

A storage mechanism in ferromagnetic-insulator-ferromagnetic spin-polarized tunneling junctions has been found by us. Based on this mechanism, we designed and fabricated a 2/spl times/2 bit Spin Tunneling Random Access Memory (STram). These junctions provide an excellent means of storing a binary data in the hard components, and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component remains unaltered.