FeN/AlN multilayer films for high moment thin film recording heads

Soft magnetic FeN films (H/sub c/<1 Oe) on Al/sub 2/O/sub 3/-TiC and Si substrates were obtained by lamination with thin AlN interlayers. These laminated films exhibit significantly different magnetic properties when grown on Al/sub 2/O/sub 3/-TiC substrates compared with those on silicon substrates. Vacuum-annealing at 300/spl deg/C decreases H/sub c/ of the films on Al/sub 2/O/sub 3/-TiC whereas it increases that on Si. These results are correlated with the variation of the /spl gamma/'-Fe/sub 4/N phase in the films.