Miller's approximation in advanced bipolar transistors under nonlocal impact ionization conditions

Using a modified ionization model based on nonlocal impact ionization conditions, Miller's relationship is reexamined for doping concentrations (/spl ges/10/sup 17//cm/sup 3/) used in advanced bipolar transistors. For the useful range of current gains (0.1>1-1/M>0.005), the empirical parameter n in Miller's relationship, evaluated under nonlocal impact ionization conditions is shown to be considerably different from that obtained using standard ionization rates.<
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