Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure

We have measured the valence-band discontinuity of strained Si/sub 1-x/Ge/sub x/ on [100] unstrained Si using p-Si/sub 1-x/Ge/sub x//Si/p-Si/sub 1-x/Ge/sub x/ semiconductor-insulator semiconductor (SIS) structures with Ge compositions in the range 10>