High-frequency transport of two-dimensional hot electrons in GaAs and In/sub 0.53/Ga/sub 0.47/As quantum wells at low temperatures

Small-signal AC mobility of hot electrons itinerant two dimensionally in GaAs and (In, Ga)As quantum wells at a lattice temperature of 4.2 K is calculated on the basis of a drifted Fermi-Dirac distribution function in the regime where energy loss occurs via deformation potential acoustic scattering and momentum loss predominantly via background impurity scattering for GaAs quantum wells and alloy scattering for (In, Ga)As quantum wells. Results are obtained for different well widths and sheet carrier concentrations. Cutoff frequencies around 15 and 100 GHz are indicated, respectively, for GaAs and (In, Ga)As quantum wells.<>