Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/

The phase transformation and stability of TiSi/sub 2/ on n/sup +/ diffusions are investigated. Narrower n/sup +/ diffusions require higher anneal temperatures, or longer anneal times, than wider diffusions for complete transitions from the high-resistivity C49 phase to the low-resistivity C54 phase. A model is presented which explains this in terms of the probability of forming C54 nuclei on narrow diffusions and the influence of diffusion width on C54 grain size. The results are that more C49 and C54 nucleation events are required to completely transform narrow lines. For thin TiSi/sub 2/ (40 nm), there is a narrow process window for achieving complete transformation without causing agglomeration of the TiSi/sub 2/. The process window decreases with decreasing silicide thickness. A significantly larger process window is achieved with short-time rapid annealing. Similar studies are performed for CoSi/sub 2/ on n/sup +/ and p/sup +/ diffusions. No linewidth dependence is observed for the transformation from CoSi/sub x/ to CoSi/sub 2/. There is a broad process window from 575 degrees C to 850 degrees C using furnace annealing, for which the low-resistivity phase is obtained without causing agglomeration.<
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